Wednesday 2 March 2016 

Speaker: Federico Faccio (CERN)


Title: "Radiation effects in CMOS technologies for the LHC upgrades" 

Abstract: In view of the upgrade of the LHC experiments for an increase of the luminosity of the accelerator, the High Energy Physics community has started the development of new electronics systems. The ASICs for these systems, in particular for the tracker detectors, are designed in either 130 or 65nm CMOS technologies, and are required to be fully operational in a radiation environment 5 to 10 times more severe than the one in the first generation of LHC experiments. The radiation effects in these technologies has been studied in the last few years with measurements made on dedicated test structures. This talk will summarise the results available on the three CMOS technologies selected for application in the LHC upgrade. Particular emphasis will be placed on the 65nm technology for which the measurements have shown surprising new effects that pose a significant problem to the choice of an adequate qualification procedure.